PE2017 mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS = 20V,ID =7A RDS(ON) < 24mΩ @ VGS=2.5V RDS(ON) < 17mΩ @ VGS=4.5V
ESD Rating: 2500V HBM
* High Power and current handing capability
* Lead free product i.
It is ESD protested.
General Features
* VDS = 20V,ID =7A RDS(ON) < 24mΩ @ VGS=2.5V RDS(ON) < 17mΩ @ VGS=4.5V
ESD Ra.
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